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介绍了一种应用于DRM/DAB频率综合器的宽带低相位噪声低功耗的CMOS压控振荡器.为了获得宽工作频带和大调谐范围,在LC谐振腔里并联一个开关控制的电容阵列.所设计的压控振荡器应用中芯国际的0.18μm RF CMOS工艺进行了流片实现.包括测试驱动电路和焊盘,整个芯片面积为750μm×560μm.测试结果表明,该压控振荡器的调谐范围为44.6%,振荡频率范围为2.27～3.57GHz.其相位噪声在频偏为1MHz时为-122.22dBc/Hz.在1.8V的电源电压下,其核心的功耗为6.16mW.
A wideband, low phase noise, low power, CMOS voltage-controlled oscillator for DRM / DAB frequency synthesizer is introduced in this paper.In order to obtain a wide operating frequency band and large tuning range, a switched capacitor array is connected in parallel with the LC resonator. The voltage-controlled oscillator is designed by SMIC’s 0.18μm RF CMOS process, including the test drive circuit and the pad, the entire chip area of 750μm × 560μm.The test results show that the voltage-controlled oscillator tuning The range is 44.6% and the oscillation frequency range is 2.27 to 3.57 GHz. Its phase noise is -122.22 dBc / Hz at a frequency offset of 1 MHz. Its core power consumption is 6.16 mW at a supply voltage of 1.8 V.