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在不同磁场下,用真空蒸发法制备了不同方向放置的Zn薄膜。对样品进行X射线衍射分析表明,在大于3T的磁场环境下,垂直于磁场放置的基片上制备的Zn薄膜最强衍射峰为(002),而平行于磁场方向放置的基片上制备的试样最强衍射峰为(101)。Zn的磁各向异性引起了晶体在磁场环境下的择优生长,磁能较低的c轴方向是Zn薄膜的优先生长方向。利用磁场诱导晶体取向这一特性,提出了一种控制薄膜取向的新方法,通过调整基片与磁场方向的放置角度即可对制备薄膜的取向进行调整。
In different magnetic fields, Zn films deposited in different directions were prepared by vacuum evaporation method. The X-ray diffraction analysis of the sample shows that the strongest diffraction peak of the Zn thin film prepared on the substrate perpendicular to the magnetic field is (002) under the magnetic field of more than 3T, and the sample prepared on the substrate parallel to the magnetic field The strongest diffraction peak is (101). The magnetic anisotropy of Zn causes the preferred growth of the crystal in the magnetic field, and the c-axis direction with lower magnetic energy is the preferential growth direction of the Zn thin film. By using the magnetic field to induce crystal orientation, a new method of controlling the orientation of the film is proposed. The orientation of the prepared film can be adjusted by adjusting the placement angle of the substrate and the magnetic field.