通过添加Cr_3C_2和Ta C晶粒长大抑制剂,采用等离子体烧结技术制备WC-Co金属陶瓷。采用扫描电镜、X射线衍射、密度测定、硬度测试、断裂韧性测试和弹性模量测试技术表征放电等离子烧结体。在相同的工艺参数下,与不添加WC-Co抑制剂的金属陶瓷进行了比较。结果表明,添加Cr_3C_2和Ta C抑制剂能提高WC-Co金属陶瓷的硬度和断裂韧性,且添加Cr_3C_2的陶瓷其晶粒生长抑制性能比添加Ta C的更好。WC-5Co-2Cr_3C_2金属陶瓷的最佳硬度和断裂韧性分别为HV_(30)(2105±38)和(8.3±0.2)MPa·m~(1/2)。 By adding Cr_3C_2 and Ta C grain growth inhibitor, WC-Co cermet was prepared by plasma sintering. The discharge plasma sintered compact was characterized by scanning electron microscopy, X-ray diffraction, density measurement, hardness test, fracture toughness test and elastic modulus test. Under the same process parameters, cermet without WC-Co inhibitor was compared. The results show that the addition of Cr 3 C 2 and Ta C inhibitors can improve the hardness and fracture toughness of WC-Co cermet, and the Cr 3 C 2 -containing ceramic has better grain growth inhibition than TaC addition. The best hardness and fracture toughness of WC-5Co-2Cr_3C_2 cermet were HV 30 (2105 ± 38) and (8.3 ± 0.2) MPa · m 1/2, respectively.