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制作了一种新型的结合了AlGaN材料结构和Poly(vinylidene fluoride)(PVDF)热释电材料的日盲紫外探测器。当紫外光从AlGaN一侧背照射至器件上时,测量PVDF两端的热释电响应光谱,测得峰值响应在入射光波长为260 nm处,响应电压高达129.6 mV(此时辐射功率为39.8 nW)。器件响应机理为:紫外光被i-Al0.35Ga0.65层吸收,产生光生载流子并复合生热,热量通过AlGaN材料传导给PVDF结构的电极,温度升高,PVDF对温度变化产生响应。为了进一步验证,制作了对比器件,即在AlGaN结构和PVDF结构之间加了一层多孔SiO2隔热层,测得的响应光谱中有两个峰值,一个在260 nm,另外一个在300 nm。与参考器件相比,在260 nm处的响应电压大大减小,说明了利用热效应探测的可行性。另外,测量了不同频率下的器件响应并对其进行理论拟合,深入研究300 nm处的响应机理。
A new type of solar blind UV detector combining AlGaN structure and Poly (vinylidene fluoride) (PVDF) pyrolyzer was fabricated. The pyroelectric response spectra of PVDF at both ends were measured when UV light was back-illuminated from the side of AlGaN. The peak response was measured at 260 nm of incident light with a response voltage of 129.6 mV (the radiated power was 39.8 nW ). The response mechanism of the device is as follows: the ultraviolet light is absorbed by the i-Al0.35Ga0.65 layer, generating photo-generated carriers and recombination heat generation, and the heat is conducted to the electrode of the PVDF structure through the AlGaN material. When the temperature rises, the PVDF responds to the temperature change. For further verification, a contrast device was fabricated by adding a porous SiO2 thermal barrier layer between the AlGaN structure and the PVDF structure. There were two peaks in the response spectrum, one at 260 nm and the other at 300 nm. The response voltage at 260 nm is greatly reduced compared to the reference device, demonstrating the feasibility of using thermal effects to detect. In addition, the device response at different frequencies was measured and theoretically fitted to investigate the response mechanism at 300 nm.