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研究了ＧａＩｎＡｓ／ＡｌＩｎＡｓｎ型调制掺杂结构样品的光致发光及其激发光谱。当空穴态被局域化后．二维电子气的发光线形反映了导带二维态密度的填充效应：导带两个子带填充电子。发光强度则表明，导带第二子带电子波函数在空间上更扩展，与空间分离的空穴产生发光复合的几率较大。激发光谱提供了样品中异质结结构直接带边附近光吸收过程的信息。
The photoluminescence and excitation spectra of GaInAs / AlInAsn-type doped structures were investigated. When the hole state is localized. The luminescence of two-dimensional electron gas reflects the filling effect of the two-dimensional state density of the conduction band: the two sub-bands of the conduction band fill the electrons. The luminescence intensity shows that the electron wave function of the second subband of the conduction band is more spatially extended, and there is a higher probability of generating luminescent recombination with the holes separated from the space. The excitation spectrum provides information on the light absorption near the direct band edge of the heterojunction structure in the sample.