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日本武藏野研究所研制带有保护环的平面型InP雪崩光电二极管的工作取得了良好的结果,并于8月举行的电子通信学会光量子电子学研究上发表。该所首先解释清楚了用于InP APD的p型杂质(特别是Zn和Cd)的扩散技术,由此阐明Zn和Cd扩散的不同点是Zn的扩散速度快和表面载流子浓度高,而两者的浓度分布大致是相同的,同时求出了分布的近似实验式。此外,还制作了台式APD,从其电容-电压特性和
The Musashino Institute of Japan developed a planar InP avalanche photodiode with a guard ring and achieved good results, which was published at the Institute of Electronics and Communication Electronics Quantum Electronics in August. This paper first explains the diffusion technique of p-type impurities (especially Zn and Cd) used for InP APD, thereby clarifying that the difference between Zn and Cd diffusion is that Zn has a high diffusion rate and a high surface carrier concentration, whereas The concentration distribution of the two is roughly the same, and the approximate experimental formula of the distribution is obtained at the same time. In addition, a desktop APD was also fabricated from its capacitance-voltage characteristics