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碳化硅和蓝宝石单晶是重要的空间光学材料,也是高亮度发光二极管用的主要衬底材料,实现它们的高质量化学机械抛光(CMP)加工,需要深入理解高化学稳定性衬底材料的超光滑加工过程的材料去除机制,其中一个具有挑战性的问题是力学-化学耦合作用下表面反应层的形成机制.本文评述了反应层形成机理的研究进展和存在的若干问题,包括表面反应层形成的热力学机理和动力学行为、CMP加工模型晶片体系的建立、表面反应层的结构和组成表征、研究结果可比性等,并提出了若干后续研究的突破点,如设计和建立表面结构可控的CMP加工模型晶片体系,并确定表面层形成的化学反应速率来解耦合化学反应过程和扩散过程.本文特别强调了多学科交叉研究方法的重要性,建议密切结合材料的表面结构及缺陷的控制和表征、表界面结构和组成分析、化学反应机理研究以及表面和胶体化学的表界面作用力测量研究.
Silicon carbide and sapphire single crystals are important spatial optical materials and are the main substrate materials for high-brightness LEDs for their high-quality chemical-mechanical polishing (CMP) processing, requiring an in-depth understanding of the high chemical stability of super-substrate materials One of the most challenging issues in the material removal process of smoothing is the mechanism of the formation of the surface reaction layer under the mechanical-chemical coupling. In this paper, the research progress and some existing problems in the formation mechanism of the reaction layer are reviewed, including the formation of surface reaction layer The thermodynamic mechanism and dynamic behavior of the wafer, the establishment of the CMP processing model wafer system, the structure and compositional characterization of the surface reaction layer, the comparability of the research results, and some breakthrough points of follow-up research are proposed, such as design and establishment of a controllable surface structure CMP processing of the model wafer system and determining the rate of chemical reaction formed by the surface layer to decouple the chemical reaction process and the diffusion process.This paper emphasizes the importance of interdisciplinary research methods and proposes to closely combine the surface structure and defect control Characterization, surface structure and composition analysis, chemical reaction mechanism to Surface and Interfacial colloid chemistry force measurement.