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研究了MOVPE方法外延P型GaN和Al0 13Ga0 87N的生长工艺 ,包括掺杂剂量和热退火条件 ,对材料电学性质的影响。得到了性能优良的P型材料 ,并研制了InGaN/AlGaN双异质结蓝光发光二极管。
The growth process of epitaxial P-type GaN and Al0 13Ga0 87N by MOVPE method is studied, including the effects of doping amount and thermal annealing conditions on the electrical properties of the material. The P-type material with excellent performance was obtained, and the InGaN / AlGaN double heterostructure blue light-emitting diode was developed.