In this paper, ATLAS 2D device simulator of SILVACO was used for device simulation of invertedstaggered thin film transistor using amorphous indium gallium zinc oxide as active layer (a-IGZO-TFT) with double active layers, based on the density of states (
Dynamics and spectral transmission of Al plasma produced by extreme ultraviolet (EUV) irradiation of 0.75-mm thick Al foil is investigated. the EUV radiation with the peak power density in the range of 0.19-0.54 TW/cm2 is provided by Z-pinch fo
Microring resonators (MRRs) with ultracompact footprints are preferred for enhancing the light-matter interactions to benefit various applications. Here, ultracompact titanium dioxide (
An all-optical wavelength reuse technique employing cost effective power efficient vertical surface emitting laser (VCSEL) is proposed to address uplink data streaming from end-users by exploiting the same wavelength assigned to them. A saturated optical