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分析了注入As在快速退火中的增强扩散效应,特别分析了注入层中缺陷生成过程所伴随的增强扩散效应。退火中引起高密度缺陷两种过程是:一反冲氧的作用;二高剂量注入As在品格中引入应力的作用。实验中发现,剂量高达2×10~(16)cm~(-2)和As通过SiO_2层注入硅时(As射程等于SiO层的厚度),注入的样品经高温退火后,As杂质剖面出现拐点。以拐点为分界划分出快扩散和慢扩散两个区域。用Boltzmann-Matano)方法计算了As在退火期间在硅中的扩散系数。用高压透射电镜观察表明,从硅表面到拐点处存在着高密度的缺陷,并且分析了缺陷在1～12s期间的发展过程。结果表明。在最初1～3s内已形成了高密度缺陷,且这种缺陷热稳定性很高,即使经1 150℃180s退火仍然存在。在此基础上分析高密度缺陷对增强扩散影响的模型。
The enhanced diffusion effect of As in the rapid anneal was analyzed. In particular, the enhanced diffusion effect accompanying defect formation in the implanted layer was analyzed. Annealing caused by high-density defects in the two processes are: a back-flushing oxygen role; two high-dose injection of As into the character of the role of stress. The experimental results show that when the dose is as high as 2 × 10 ~ (16) cm ~ (-2) and As is injected into Si via SiO_2 layer (As range is equal to the thickness of SiO layer) . Divided by the inflection point into the rapid diffusion and slow diffusion of the two regions. The diffusion coefficient of As in silicon during annealing was calculated using the Boltzmann-Matano method. High-pressure transmission electron microscopy showed that there was a high density of defects from the silicon surface to the inflection point, and the development of defects during 1 to 12 s was analyzed. The results show. High-density defects have been formed within the first 1 to 3 s and the thermal stability of such defects is high, even after 180 s annealing at 1 150 ° C. Based on this, a model of the effect of high-density defects on enhanced diffusion is analyzed.