对不同加速电压电子束泵浦下的ZnO/Zn0.85Mg0.15O量子阱的荧光光谱进行了研究。样品利用分子束外延技术在蓝宝石衬底上生长。激子隧穿使非对称双量子阱的激发效率相对于对称阱有了明显提高。非对称阱的结构设计使最佳激发电压从对称阱的7 kV降低到了更适合器件小型化的5 kV。 The fluorescence spectra of ZnO / Zn0.85Mg0.15O quantum wells under different accelerating voltage electron beam pumping were studied. Samples were grown on sapphire substrates using molecular beam epitaxy. Exciton tunneling makes the excitation efficiency of the asymmetric double quantum well significantly higher than that of a symmetric well. The structure of the asymmetric well is designed to reduce the optimum excitation voltage from 7 kV in a symmetric well to 5 kV which is more suitable for device miniaturization.