消除半导体激光诱导腐蚀晶向影响的两步腐蚀新方法

来源 :光学学报 | 被引量 : 0次 | 上传用户:langzi229229
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
提出了一种消除激光化学诱导液相腐蚀晶体取向影响的新方法———两步腐蚀法。激光化学液相两步腐蚀法实质上是加长非晶向方向图形的腐蚀时间,保证与晶向方向腐蚀程度一致。实验结果表明,晶体取向对激光化学诱导液相腐蚀图形有较大的影响;两步腐蚀法可以有效地消除晶体取向影响,得到需要的图形;与国内外普遍采用的表面抗蚀膜掩蔽和激光光强分布调节等方法相比,具有可以处理内部晶向影响,操作简单,设备要求低等特点,两步腐蚀法可以有效地克服常规方法的诸多弊端,达到消除晶向影响的目的,在特殊结构光电器件和光电集成中具有广泛的应用前景。 A new method to eliminate the influence of laser chemical induced liquid phase etching crystal orientation --- two-step etching method was proposed. The laser chemical liquid two-step etching method is essentially to extend the etching time of the non-crystallographic direction to ensure the same degree of corrosion with the crystal orientation. The experimental results show that the crystal orientation has a great influence on the chemical etching induced by the laser. The two-step etching method can effectively eliminate the influence of the crystal orientation and obtain the desired pattern. With the commonly used surface resist masking and laser Light intensity distribution adjustment and other methods compared to have the effect of dealing with the internal crystal orientation, simple operation, low equipment requirements, two-step corrosion method can effectively overcome the drawbacks of conventional methods to achieve the purpose of eliminating the influence of crystal orientation, special Structure optoelectronic devices and optoelectronic integration has a wide range of applications.
其他文献