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研究了脉冲中子辐照的中子嬗变掺杂 (NTD)硅二极管中缺陷的形成及其退火特征 ,并与热中子辐照样品进行了比较。深能级瞬态谱仪 (DL TS)测量表明硅中主要存在五类电活性缺陷 :氧空位 E1(Ec- 0 .19e V) ,不同荷电态的双空位 E2 (Ec- 0 .2 8e V)和 E4 (Ec- 0 .4 0 e V) ,双空位与氧杂质相结合的络合物 E3 (Ec- 0 .31e V) ,以及与样品材料原生缺陷有关的辐照感生缺陷 E5(Ec- 0 .4 8e V)。实验结果表明 ,脉冲中子辐照由于其高的中子能量和辐照剂量率 ,导致复杂络合物的浓度高于简单缺陷浓度。进一步 4 0 0℃温度以下退火实验显示了缺陷的分解和重建过程
The formation and annealing characteristics of defects in neutron-transmutation-doped (NTD) silicon diodes irradiated by pulsed neutron were investigated and compared with the thermal neutron irradiation samples. DL TS measurements show that there are mainly five kinds of electroactive defects in silicon: oxygen vacancy E1 (Ec-0 .19eV), double vacancy E2 (Ec-0 .28e E3 (Ec-0.30eV), E3 (Ec-0.31e V) with double vacancies combined with oxygen vacancies and irradiation-induced defects E5 associated with primary defect of sample material (Ec-0 .48eV). The experimental results show that the pulsed neutron irradiation due to its high neutron energy and radiation dose rate, resulting in complex complex concentration higher than the simple defect concentration. Further annealing at 400 ℃ showed the process of decomposition and reconstruction of defects