论文部分内容阅读
针对硅在 KOH中的各向异性腐蚀提出了一个新的物理模型 .此模型从微观角度出发 ,根据实际的腐蚀化学反应过程确定了若干微观状态 ,提出了反映腐蚀特性的若干微观参数 .将腐蚀温度、浓度等对腐蚀速率的影响也反映了进去 .计算结果与实验结果进行了对比 ,表明此模型在解释硅在 KOH中各向异性腐蚀特性等方面具有一定的合理性 .
For the anisotropic corrosion of silicon in KOH, a new physical model is proposed, in which the micro-state is determined according to the actual chemical reaction process and some micro-parameters which reflect the corrosion characteristics are proposed. The effects of temperature and concentration on the corrosion rate are also reflected in the calculation results and the experimental results are compared, indicating that this model is reasonable in explaining the anisotropic corrosion behavior of silicon in KOH.