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室温下将能量为１４０ｋｅＶ、剂量为５×１０１６／ｃｍ２的Ｈ＋注入到硅单晶中，在硅表层下形成了气泡层。采用背散射与沟道技术、热波分析技术以及金相显微镜等分析测试手段，对气泡层的退火行为进行了研究。结果表明退火过程中存在一个临界温度（４２０℃），高于临界温度退火，样品表面会形成砂眼或发生薄层剥离现象，而且剥离块密度随退火温度的升高而增加；而在临界温度以下，气泡层对表层硅的单晶质量没有影响。热波测量的结果表明薄层剥离后在样品表面留下了粗糙的凹坑。还对样品注Ｈ＋并退火后硅表面薄层的剥离现象进行了讨论。
H + at an energy of 140 keV and a dose of 5 × 10 16 / cm 2 was implanted into the silicon single crystal at room temperature to form a bubble layer under the silicon surface. The backscattering and channeling technique, thermal wave analysis and metallographic microscope were used to analyze the annealing behavior of bubble layer. The results show that there is a critical temperature (420 ℃) in the annealing process, annealing above the critical temperature, the formation of sand blisters on the sample surface or thin layer peeling phenomenon, and the delamination density increases with the annealing temperature; and below the critical temperature , The bubble layer had no effect on the single crystal quality of the surface silicon. The results of the thermal wave measurements show that the thin layer left a rough pits on the sample surface after being peeled off. The delamination of the thin film on the silicon surface after H + injection and annealing was also discussed.