论文部分内容阅读
介绍了一种新型的非制冷高灵敏度硅微机械电子隧穿红外探测器的工作原理 ,详细描述了这种红外探测器的设计思想和制作工艺 ,采用微机械体硅加工的三层硅结构制作出探测器原理样品 ,通过和反馈电路 (包括前置放大电路 )连接测试表明 :电子隧穿位移传感器部分的分辨率可达 10 -4 nm/ Hz,红外探测器样品已能敏感红外信号。
This paper introduces the working principle of a new type of uncooled high sensitivity silicon micromachined electron tunneling infrared detector. The design idea and manufacturing process of this kind of infrared detector are described in detail. It is made of three layers silicon structure of micromachined silicon The principle of the detector samples, and the feedback circuit (including the preamplifier circuit) connection test showed that: electron tunneling displacement sensor part of the resolution up to 10 -4 nm / Hz, infrared detector samples have been able to sensitive infrared signal.