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模拟了垂直腔面发射激光器(VCSEL)的反射谱和量子阱增益谱,采用金属有机物化学气相沉积设备外延生长了980nm的垂直腔面发射激光器,制作了氧化孔径为14μm的内腔式氧化限制型VCSEL器件,其阈值电流为3.3mA,阈值电压为1.8V,斜率效率为0.387W/A,室温直流电流为22.8mA时,输出光功率为5mW。
The reflection spectrum and quantum well gain spectrum of vertical cavity surface emitting laser (VCSEL) were simulated. Vertical cavity surface emitting lasers (980nm) were epitaxially grown by metalorganic chemical vapor deposition (CVD), and a cavity oxidation limiting type The VCSEL device has a threshold current of 3.3mA, a threshold voltage of 1.8V, a slope efficiency of 0.387W / A and an output optical power of 5mW at a room temperature DC current of 22.8mA.