采用ＮＨ３和Ｎ２Ｏ的等离子体分别对ｐ－Ｓｉ（多晶硅）薄膜表面进行了钝化处理，处理后的 ｐ－Ｓｉ ＴＦＴ（薄膜晶体管）具有比未处理 ＴＦＴ更优越的性能，通电试验与热应力试验后，处理后的器件呈现出更好的承受电负荷和热应力能力，钝化的微观机理是ＮＨ３和Ｎ２Ｏ等离子体中和了ｐ－Ｓｉ薄膜的悬挂键，形成牢固的Ｓｉ－Ｎ键，减少了表面态密度． The surface of the p-Si (polycrystalline silicon) film was passivated with a plasma of NH3 and N2O, respectively, and the treated p-Si TFT (thin film transistor) had superior performance over the untreated TFT. The energization test and the thermal stress test After treatment, the treated devices showed a better ability to withstand the electrical load and thermal stress. The microscopic mechanism of passivation is that the NH3 and N2O plasmas neutralize the dangling bonds of the p-Si film to form strong Si-N bonds and reduce Surface state density.