论文部分内容阅读
化学机械抛光 (CMP)技术是同时利用化学和机械作用来获得固体表面亚微米尺度上平整性非常有效的方法 ,从 90年代初期起已成为制备高质量镜头和镜面及集成电路制造过程中硅片表面预处理工艺中最常用的技术之一 .钨的化学机械抛光是用钨坯获得硅片球面平整度的重要工艺 .其过程实际上是先将钨沉积到硅上已有的薄粘附层 -氮化钛上 ,然后进行化学机械抛光 .当抛光阶段接近终了时 ,氮化钛和钨表面将同时暴露在化学抛光液中形成电偶对 ,并在界面上发生腐蚀行为 ,从而影响硅片的球面平整度 ,降低半导体器件的性能与可靠性 .本文通过采用电化学直流极化技术 ,分别获得钨与氮化钛在 0 .0 1mol/LKNO3溶液中或含有三种典型的研磨剂 (H2 O2 ,KIO3,Fe(NO3) 3)溶液中的极化曲线 ,同时设计了一种特殊的电解槽以测量钨和氮化钛之间相互作用的电流 ,初步研究了 patterned硅片上钨和氮化钛界面形成电偶对时的腐蚀行为 .根据所测的钨和氮化钛电位可知 ,当钨和氮化钛表面同时暴露在抛光液中时将形成电偶对 ,氮化钛成为阴极 ,钨为阳极 ,并于界面发生电化学反应 ,表面的不均匀腐蚀将造成硅片平整度的降低 .结果表明 ,当溶液中含有H2 O2 时钨和氮化钛界面的腐蚀速度最大 ,而当溶液中含有Fe(NO3) 3时的钨和氮化钛界面则几乎不发?
The chemical mechanical polishing (CMP) technique is a very effective method that uses both chemical and mechanical effects to achieve flatness on the submicron scale of solid surfaces. Since the early 1990s, the chemical mechanical polishing (CMP) technology has become the technology for producing high quality lenses and mirrors and integrated circuits One of the most commonly used techniques for surface preparation is chemical mechanical polishing of tungsten, an important process for obtaining the flatness of a silicon wafer with a tungsten blank. The process is essentially the deposition of tungsten onto an existing thin adhesive layer on silicon - Titanium nitride, followed by chemical-mechanical polishing. When the polishing stage is nearing end, the titanium nitride and tungsten surfaces will be simultaneously exposed to the chemical polishing liquid to form a galvanic couple and corrode at the interface, affecting the silicon wafer Of the spherical flatness, reducing the performance and reliability of semiconductor devices.In this paper, electrochemical DC polarization techniques were used to obtain tungsten and titanium nitride in 0. 01mol / LKNO3 solution or containing three typical abrasives (H2 O2, KIO3, Fe (NO3) 3) solution. Meanwhile, a special electrolyzer was designed to measure the current of interaction between tungsten and titanium nitride. The effects of pattern ed Corrosion behavior of the interface between tungsten and titanium nitride on a silicon wafer forming a galvanic couple According to the measured tungsten and titanium nitride potentials, it is known that when tungsten and titanium nitride surfaces are simultaneously exposed to the polishing solution, a galvanic couple , Titanium nitride becomes the cathode and tungsten acts as the anode, and electrochemical reaction occurs at the interface. The nonuniform corrosion on the surface will reduce the flatness of the silicon wafer. The results show that when the solution contains H2O2, the interface between tungsten and titanium nitride The corrosion rate is the largest, and when the solution contains Fe (NO3) 3 when the tungsten and titanium nitride interface is almost no hair?