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随着功率半导体器件特别是高压、大电流IGBT模块的快速发展和广泛应用,对封装材料中的陶瓷衬板提出了更高的要求,其中可靠性是其设计中最为关键的指标之一。活性金属钎焊工艺(AMB)制备的Al N陶瓷覆铜衬板因可靠性高而成为高压大功率IGBT模块封装中陶瓷衬板的首选。文章对比了AMB工艺和DBC工艺制备的Al N陶瓷覆铜衬板的剥离强度和热冲击性能,并提出了控制Ti N层厚度、增加铜箔边缘小孔深度和增加铜箔侧蚀量3种方法来提升AMB工艺制备的Al N覆铜衬板的可靠性。结果表明,可靠性提升后的Al N覆铜衬板耐热冲击可达到1 300次、剥离强度达到18 N/mm、空洞率达到0,性能优于国外产品,满足高压大功率IGBT模块封装技术要求。
With the rapid development and widespread application of power semiconductor devices, especially high-voltage, high-current IGBT modules, higher requirements are placed on the ceramic liner in the packaging materials, of which reliability is one of the most critical indicators in its design. The Al N ceramic copper clad laminate made from the active metal brazing process (AMB) is the first choice of ceramic liner for high voltage and high power IGBT module package because of its high reliability. In this paper, the peel strength and thermal shock resistance of Al N ceramic-ceramic coated Liner made by AMB process and DBC process were compared. The thickness of Ti N layer, the depth of the small holes on the edge of the copper foil and the amount of lateral erosion of copper foil Method to improve the reliability of Al N copper clad laminate prepared by AMB process. The results show that the thermal stability of Al N copper clad laminate can reach 1,300 times with peel strength up to 18 N / mm and void ratio up to 0, which is superior to foreign products to meet the high voltage and high power IGBT module packaging technology Claim.