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采用Zr靶和Al2O3靶通过在Ar,N2混合气氛中进行反应磁控溅射的方法制备了不同AlON调制层厚和不同ZrN调制层厚的两个系列的ZrN/AlON纳米多层膜.利用X射线能量色散谱仪、X射线衍射仪、高分辨透射电子显微镜和微力学探针研究了多层膜的成分、微结构和力学性能.结果表明,在Ar,N2混合气氛中对Al2O3进行溅射的过程中,N原子会部分取代Al2O3中的氧原子,形成AlON化合物.在ZrN/AlON纳米多层膜中,由于受到ZrN晶体调制层的模板作用,溅射条件下以非晶态存在的AlON层在其厚度小于0.9nm时被强制晶化并与ZrN层形成共格外延生长;相应地,多层膜的硬度明显提高,最高硬度达到33.0GPa.进一步增加多层膜中AlON调制层的厚度,AlON层形成非晶结构,破坏了多层膜的共格外延生长,导致其硬度逐步降低.
A series of ZrN / AlON nano-multilayer films with different AlON modulation layer thickness and different ZrN modulation layer thicknesses were prepared by reactive magnetron sputtering in a mixture of Ar and N2 using Zr target and Al2O3 target. The composition, microstructure and mechanical properties of multilayer films were investigated by X-ray diffraction, energy dispersive spectroscopy, X-ray diffraction, high-resolution transmission electron microscopy and micromechanical probes. , N atoms partially replace the oxygen atoms in Al2O3 to form AlON compounds.In the ZrN / AlON nano-multilayer, due to the template effect of ZrN crystal modulation layer, the AlON The layer was forcibly crystallized at a thickness of less than 0.9 nm and formed a coextensive epitaxial growth with the ZrN layer; accordingly, the hardness of the multilayer film remarkably increased to a maximum hardness of 33.0 GPa. The thickness of the AlON modulation layer in the multilayer film was further increased , AlON layer to form an amorphous structure, undermined the coexistence multilayer epitaxial growth, leading to the gradual decrease in hardness.