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NiO是一种天然p型直接带隙半导体材料,首次采用磁控溅射的方法在n型4H-SiC(0001)衬底上淀积NiO薄膜,制作p-NiO/n-4H-SiC异质结.研究了氧气和氩气体积流量对NiO薄膜特性的影响,并研究了NiO/SiC异质结的光电特性.结果 表明:所制备的NiO薄膜为多晶结构,当氧气和氩气体积流量均为30 cm3/min时,NiO薄膜出现[200]晶向的择优生长,呈现p型导电,薄膜平整致密,粒径约为15 nm.采用Ni作为金属电极,J-V测试结果表明异质结具有较好的整流特性,开启电压约为1.4V,在13.5 mW的紫外灯照射下,异质结出现了光响应,开路电压Voc约为30 mV,光电流密度Jph为0.89mA/cm2.“,”NiO is a natural p-type direct band-gap semiconductor material.A p-NiO/n-4H-SiC heterojunction was fabricated with NiO films deposited on 4H-SiC (0001) substrate by the magnetron sputtering method.The effects of the oxygen volume flow and argon volume flow on the NiO film properties were studied,and the photoelectric properties of the NiO/SiC heterojunction were studied.The results show that the prepared NiO films are polycrystalline structure,when oxygen volume flow and argon volume flow are both 30 cm3/min,the NiO flims appear [200] crystal orientation,the grain size of the smooth and compact p-type films is about 15 nm.Ni was used as the electrode metal.The J-V measurement result indicates that the heterojunction has good rectifying behaviour with a turn-on voltage of about 1.4 V.Under a UV-light illumination of 13.5 mW,the heterojunction exhibits good photo-response with the open circuit voltage Voc of about 30 mV and photocurrent density Jph of 0.89 mA/cm2.