采用直流磁控溅射后退火法制备了Y1Ba2Cu3O7-x/Si和Y1Ba2Cu3O7-x/ZrO2/SiO2两种半导体薄膜,对该薄膜进行了红外热辐射响应特性研究。采用X射线衍射、电阻温度系数法、喇曼散射表征手段对薄膜的显微结构进行了详细分析。结果表明,有过渡层的Y1Ba2Cu3O7-x半导体薄膜均匀性好,信噪比高,在红外波段和亚毫米波段甚至毫米波段都有良好的热辐射响应,适于制做非制冷探测器的敏感元。 Two semiconductor films, Y1Ba2Cu3O7-x / Si and Y1Ba2Cu3O7-x / ZrO2 / SiO2, were prepared by direct current magnetron sputtering annealing method. The infrared thermal response characteristics of the film were studied. The microstructure of the films was analyzed by X-ray diffraction, temperature coefficient of resistance, and Raman scattering characterization. The results show that the Y1Ba2Cu3O7-x semiconductor thin film with transitional layer has good uniformity and high signal-to-noise ratio, and has good thermal radiation response in the infrared and submillimeter and even millimeter wavebands. It is suitable for making the sensitive elements .