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使用Silvaco软件建立了背照式CCD仿真模型,利用该模型进行了工艺和器件仿真,研究了背面减薄、背面掺杂、界面陷阱和增透膜对背照式CCD量子效率的影响。仿真结果表明:界面陷阱和硅表面反射是量子效率损失的重要原因。在完全去除过渡区后,利用峰值位于表面且具有高杂质浓度梯度的背面掺杂和适当的单层增透膜,可获得峰值在90%以上的量子效率。
The back-illuminated CCD simulation model was established using Silvaco software. The simulation of the process and device was carried out by using the model. The effects of back thinning, backside doping, interface trap and antireflection coating on the quantum efficiency of back-illuminated CCD were studied. The simulation results show that the interface traps and the silicon surface reflection are the important reasons for the quantum efficiency loss. After complete removal of the transition region, quantum efficiencies with peaks above 90% are obtained with backside doping peaked at the surface and with a high impurity concentration gradient and a suitable monolayer antireflection coating.