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利用相同器件工艺在两种不同材料结构上制备了Al N/Ga N高电子迁移率晶体管(HEMT),研究了Al Ga N背势垒结构对器件特性的影响。测试结果表明,有背势垒结构的器件最大饱和电流密度和峰值跨导要小于无背势垒结构器件,栅压偏置为+1 V时,无背势垒的Al N/Ga N HEMT器件最大饱和电流密度为1.02 A·mm-1,峰值跨导为304 m S·mm-1,有背势垒结构的器件饱和电流密度为0.75 A·mm-1,峰值跨导为252 m S·mm-1。有背势垒结构器件的亚阈值斜率为136 m V/dec,击穿电压为78 V;无背势垒结构器件的亚阈值斜率为150 m V/dec,击穿电压为64 V。栅长为0.25μm有背势垒结构的器件电流截止频率高于无背势垒结构器件,最高振荡频率要低于无背势垒结构的器件。
Al N / Ga N high electron mobility transistor (HEMT) was fabricated on two different material structures using the same device process and the effect of Al Ga N back barrier structure on the device characteristics was investigated. The experimental results show that the maximum saturation current density and the peak transconductance of the device with back-barrier structure are smaller than that of the back-barrier-free device and the gate voltage bias is +1 V, the Al N / Ga N HEMT device without back barrier The maximum saturation current density is 1.02 A · mm-1, the peak transconductance is 304 m S · mm-1, the device saturation current density is 0.75 A · mm-1 with the back-barrier structure and the peak transconductance is 252 m S · mm-1. The back-barrier device has a sub-threshold slope of 136 mV / dec and a breakdown voltage of 78 V; the sub-threshold slope of the back-barrier-free device is 150 mV / dec and the breakdown voltage is 64 V. The gate current is 0.25μm. The cutoff frequency of the device with back barrier structure is higher than that of the backless barrier device, and the highest oscillation frequency is lower than that of the backless barrier device.