大多数半导体器件和单片集成电路系采用平面工艺制做。台式器件比平面器件有许多优点,且可获得平面工艺所不能得到的特殊性能。然而,台式技术产生无掩蔽的结,且无实用的钝化方法予以完全保护。一种新的工艺结合了台式和平面工艺,即氮化硅(Si_3N_4)掩蔽、热氧化、扩散后形成台面的工艺称为 SIMTOP。工艺过程基本如下:Si_3N_4薄层淀积到硅片上。利用光刻和适当的腐触剂腐触 Si_3N_4以形成所希望的几何形状。然后腐蚀硅以形成台面。如果硅材料是〈100〉 Most semiconductor devices and monolithic integrated circuits are made using a planar process. Benchtop devices have many advantages over planar devices and provide exceptional performance that planar processes can not. However, desktop technology creates a non-masking knot and is completely protected by no practical passivation methods. A new process combines desktop and planar processes, namely silicon nitride (Si_3N_4) masking, thermal oxidation, diffusion process to form a mesa called SIMTOP. The basic process is as follows: Si_3N_4 thin layer deposited on the silicon. Si_3N_4 is lithographically etched with a suitable caulking agent to form the desired geometry. The silicon is then etched to form a mesa. If the silicon material is <100>