综述了砷化镓场效应管超高速逻辑电路的国外概况。说明了发展砷化镓场效应管超高速逻辑电路的必要性和可能性。介绍了所用的器件结构、电路形式、电路的水平动向及发展这种电路所需的技术。指出了直接耦合场效应管逻辑无论在超高速还是在大规模方面均有发展前途。 The foreign situation of super-high speed logic circuit of gallium arsenide field-effect transistor is reviewed. Described the necessity and possibility of developing super-speed logic circuit of gallium arsenide field-effect transistor. The structure of the device used, the form of the circuit, the horizontal dynamics of the circuit, and the techniques required to develop such a circuit are presented. It is pointed out that the logic of direct-coupled FETs has a promising future in both ultra-high speed and large-scale applications.