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建立了抽象化的理论模型对p-n结隧道击穿机理进行定量研究,在理论模型的基础上探讨了电子势垒的形状以及势垒形状随外加电压的变化,并进行定量计算,得出隧穿电压随杂质掺杂浓度的变化规律。所得结论与硅、锗p-n结实验数据相吻合,证明了所建立的理论模型在定量研究p-n结的隧道击穿中的合理性与实用性。该理论模型对研究一般材料或器件的隧道击穿具有重要的借鉴意义。
The abstract theoretical model is established to study the tunneling mechanism of pn junction quantitatively. Based on the theoretical model, the shape of the electron barrier and the change of the shape of the potential barrier with applied voltage are calculated and the tunneling is obtained The variation of voltage with impurity doping concentration. The obtained results are in good agreement with the experimental data of p-n junction of Si and Ge, which proves the rationality and practicability of the theoretical model established in the quantitative study of tunneling breakdown of p-n junctions. The theoretical model of the general materials or devices to study the tunnel breakdown has important reference.