引言为了探测注入式激光器(0.9μm)和钕激光器(1.06μm)的辐射,在结的高场区内利用雪崩增益就能大大提高硅光电二极管的响应度,这些雪崩器件的噪声等效功率能减少一百倍以上。本文描述了“单个元件”和“象限”结构的硅雪崩光电二极管的特性。这些器件在光学接收机上得到了典型的使用,包括为获得接收机的最佳性能方面运用参数的研究。器件结构短的光脉冲的有效探测要求吸收在反偏压结的过渡层或至少很接近于过渡层的光子。由 INTRODUCTION In order to probe the radiation of an injection laser (0.9μm) and a neodymium laser (1.06μm), the responsiveness of silicon photodiodes can be greatly enhanced by using avalanche gain in the junction high field region. The noise equivalent power of these avalanche devices Reduce a hundred times more. This article describes the characteristics of “single-element” and “quadrant” silicon avalanche photodiodes. These devices are typically used on optical receivers, including research into the parameters used to get the best receiver performance. Efficient detection of short optical pulses of the device structure requires the absorption of photons at the transition layer of the reverse bias junction or at least in close proximity to the transition layer. by