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包括固态扩散、氧化和照相制版工艺的所谓平面工艺已经十分成熟。这一成就标志着经过了一系列的变化和改进,这些变化和改进是由制造先进型器件所必需的很多严格控制的要求而引起的。目前的扩散工艺正反映着这些变化。我们逐年地观察在n-p-n结构中形成发射极磷扩散的进展,就可以了解工艺的最佳化,这最佳化不仅作为工艺什价的结果,而且还考虑到器件的要求,例如电学特性、性能及成品率。下面将详细讨论五氧化二磷(P_2O_5)和三氯氧磷(POCI_3)的扩散。
So-called planar processes that include solid-state diffusion, oxidation, and photolithography processes are well established. This achievement marks a series of changes and improvements that have resulted from the many tightly controlled requirements necessary to make advanced devices. The current diffusion process reflects these changes. As we progressively observe the evolution of emitter phosphor diffusion in the npn structure, we know how to optimize the process, not only as a result of the process, but also the device requirements such as electrical characteristics, performance And yield. The diffusion of phosphorus pentoxide (P 2 O 5) and phosphorus oxychloride (POCI 3) will be discussed in detail below.