Nowadays, fabrication of micro/nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro/nano-assembling method, which is accurate and efficient, especially suitable for the fabrication of micro/nano-scale electronic devices. Using this method, a self-powered ZnO/Sb-doped ZnO nanowire p–n homojunction ultraviolet detector(UVD) was fabricated, and the detailed photoelectric properties were tested. At a reverse bias of -0.1 V under UV light illumination, the photoresponse sensitivity of the UVD was 26.5 and the rise/decay time of the UVD was as short as 30 ms. The micro/nano-assembling method has wide potential applications in the fabrication of specific micro/nano-scale electronic devices. Nowadays, fabrication of micro / nano-scale electronic devices with bottom-up approach is paid much research attention. Here, we provide a novel micro / nano-assembling method, which is accurate and efficient, especially suitable for the fabrication of micro / nano -scale electronic devices. Using this method, a self-powered ZnO / Sb-doped ZnO nanowire p-n homojunction ultraviolet detector (UVD) was fabricated, and detailed properties were tested. At a reverse bias of -0.1 V under UV light illumination, the sensitivity of the UVD was 26.5 and the rise / decay time of the UVD was as short as 30 ms. The micro / nano-assembling method has wide potential applications in the fabrication of specific micro / nano-scale electronic devices .