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A fully integrated Ku-band voltage controlled oscillator(VCO) is presented in an InGaP/GaAs heterojunction bipolar transistor(HBT) technology. To achieve the wide tuning range(TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to6.46 d Bm, and a phase noise of 94:9 d Bc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 m W from 5 V supply and occupies an area of 0.81 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.
A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP / GaAs heterojunction bipolar transistor (HBT) technology. The VCO employs a Colpitts configuration, and the VCO simultaneously achievable high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz with a frequency TR of 15.47%, an output power from 0.31 to 6.46 d Bm, and a phase noise of 94: 9 d Bc / Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 m W from 5 V supply and occupies an area of 0.81 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.