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利用高分子共混物的自组装机理,将聚苯乙烯(polystyrene,PS)和聚甲基丙烯酸甲酯(polymethyl methacrylate,PMMA)进行混合形成共混物,并进行微相分离和自组装,然后将共混物放置到超声装置中,利用超声波辅助,使自组装微粒直径和位置分布相对均匀,形成用于刻蚀微纳结构的微掩模。最后利用湿法腐蚀,在LED的GaP窗口层上制作出纳米结构的粗化层。通过SEM、显微镜手段,优化了刻蚀条件。测量了器件的光强、光功率以及I-V曲线,结果表明,使用高分子自组装进行粗化,可以在保持电压及波长特性的条件下,提高光输出功率19.3%。
Using the self-assembly mechanism of polymer blends, polystyrene (PS) and polymethylmethacrylate (PMMA) are mixed to form a blend, which is subjected to micro-phase separation and self-assembly, and then The blend was placed in an ultrasonic device and assisted by ultrasound to make the self-assembled particles have a relatively uniform diameter and position distribution, thereby forming a micro-mask for etching the micro-nano structure. Finally, wet etching was used to fabricate a nanostructured roughened layer on the LED GaP window layer. The etching conditions were optimized by SEM and microscopy. The light intensity, optical power and I-V curve of the device were measured. The results show that using the self-assembly of polymer to roughening, the light output power can be increased by 19.3% while maintaining the voltage and wavelength characteristics.