In this work, a method based on scanning Kelvin probe microscopy is proposed to separately extract source/drain(S/D) series resistance in operating amorphous in
Silicon junction field effect transistors(JFETs) have been exposed to Co~(60)-rays to study radiationinduced effects on their dc characteristics and noise. The
The origin of anomalous luminescence efficiency enhancement of short-term aged Ga N-based blue light-emitting diodes was studied. We found that the intensity of