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据《科技开发动态》2003年第11期报导,该成果开发的利用电沉积技术制备可调电子和光子带隙的三维半导体量子点光子晶体技术包括:由胶体化学方法制备Ⅱ—Ⅵ族半导体CdSe、Cds或ZnO等量子点,得到单分散性高的电子带隙可调的半导体量子点;用胶体化学方法,分别通过正硅酸乙酯水解和苯乙烯单体聚合制备尺寸在200～400纳米的溶胶SiO_2和PS小球;通过自然沉积法,由溶胶SiO_2和PS小球自组织晶化,沉积在ITO导电玻璃上制备成三维光子晶体模板;然后用电沉积法将半导体量子点填充入PS模板。所得到的CdSe等光子晶体的电子带隙可调,使其覆盖可见光范围。
According to “Science and Technology Development,” 2003 No. 11 reported that the results of the development of the use of electrodeposition technology to prepare adjustable electron and photonic bandgap three-dimensional semiconductor quantum dot photonic crystal technology includes: the colloidal chemical preparation of Ⅱ-Ⅵ semiconductor CdSe , Cds or ZnO and other quantum dots to obtain a high monodisperse electronic bandgap semiconductor quantum dots adjustable; colloidal chemical methods, respectively, by hydrolysis of tetraethyl orthosilicate and styrene monomer polymerization to prepare a size of 200 to 400 nanometers Sol-SiO 2 and PS beads were prepared by self-organized crystallization of SiO 2 and PS spheres on ITO conductive glass by natural deposition method. Then the semiconductor quantum dots were filled into PS by electrodeposition template. The obtained CdSe photonic crystals such as electronic bandgap can be adjusted to cover the visible range.