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利用纳秒激光辐照PV型线阵HgCdTe探测器的局部光敏元,获得了该类器件损伤前被辐照和未被辐照像元输出信号随激光能量密度变化的全部响应规律,指出基底信号二阶段响应和光信号六阶段响应的规律特点,同时给出不同响应阶段激光能量密度阈值范围;发现了基底信号整体跃变的零压输出、光响应信号输出凹陷-回升-凸起等反常响应现象;并从探测器读出电路和热生电动势的角度揭示了反常响应现象的产生机理,希望能加强对阵列型HgCdTe探测器光响应特性的深刻认识,为该类器件的技术创新提供启示。
Using nanosecond laser to irradiate the local photosensors of the PV linear HgCdTe detector, the full response of the output signals of irradiated and un-irradiated pixels with the laser energy density before damage is obtained. It is pointed out that the base signal Second-order response and optical signal six-stage response characteristics of the law at the same time give the different response phase laser energy density threshold range; found the base signal of the overall transition of the zero pressure output, light response signal output depression - rebound - bump and other anomalous response The mechanism of anomalous response phenomena is revealed from the viewpoints of the detector readout circuit and the induced electromotive force. It is hoped that the understanding of the photoresponse characteristics of the array HgCdTe detector can be strengthened and the implications for the technological innovation of such devices can be enlightened.