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ST Microelectronics 公司(以下简称 ST Micro)为在成本竞争激烈的通信市场独占鳌头,推出了锗硅双极-COMS 兼容(SiGe Bi-CMOS)工艺,该公司对 SiGe Bi-CMOS 工艺进行了优化使之用于生产下一代移动电话等无绳产品所急需的射频(RF)芯片。该工艺采用了高剂量 Ge 离子注入以获得所希望的速度;采用沟槽隔离技术使 HBT(异质结双极二极管)噪声系数大为降低;采用无选择外延降低制造成本。整个工艺与标准 CMOS 工艺兼容。SiGe Bi-CMOS 工艺还可以形成高质量的无源元件,包括2GHz 下品质因数达17螺旋状电感,MIM(金属-绝缘层-金属)电容,垂直隔离 PNP 晶体管,以及用多晶硅做成高阻值电阻,这使得该公司的电路集成
ST Microelectronics (ST Micro), which pioneered cost-competitive communications markets with the SiGe Bi-CMOS process, has optimized the SiGe Bi-CMOS process for use with Radio frequency (RF) chips are urgently needed to make cordless products such as the next generation of mobile phones. The process uses high-dose Ge ion implantation to achieve the desired speed; the use of trench isolation technology makes HBT (heterojunction bipolar diode) noise figure is greatly reduced; the use of optional epitaxial to reduce manufacturing costs. The entire process is compatible with standard CMOS processes. The SiGe Bi-CMOS process also enables the formation of high quality passive components including inductors at 17 GHz at 2 GHz, MIM (metal-insulator-metal) capacitors, vertically isolated PNP transistors, and polysilicon Resistor, which makes the company’s circuit integrated