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利用气密性好,干燥度高的 AsCl_3—Ga—H_2系统,能够连续得到77°K 下的迁移率为1.8～2.1×10~5厘米~2/伏·秒的砷化镓外延层。明确了迁移率随生长层厚度的减薄而减小以及三氯化砷浓度与生长层载流子浓度的对数呈直线关系。报导了实验用的装置及生长方法的详细情况。
The GaAs epitaxial layer with a mobility of 1.8-2.1 × 10 -5 cm -2 / V · sec at 77 ° K can be continuously obtained by using the AsCl 3 -Ga-H 2 system with good gas-tightness and high dryness. It is clear that the mobility decreases as the thickness of the growth layer decreases and the concentration of arsenic trichloride has a linear relationship with the logarithm of the carrier concentration of the growth layer. The details of the experimental device and method of growth are reported.