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采用测试半导体激光器热弛豫时间的新方法,测量光信号脉冲内不同时刻的时间分辨光谱,测试了 TO 封装和 cm-Bar 列阵的 AIGaAs/GaAs 半导体激光器泵浦光源,得到其热弛豫时间分别为为66μs和96μs。在目前常用的方波驱动电流脉冲工作条件下,半导体激光器作为固体激光器泵浦源,如果热弛豫时间过长,单个脉冲内激射波长会偏离固体激光介质的吸收带,导致泵浦光波长利用率和有效泵浦能量降低。为克服现有技术的不足,文中提出了两种新型的驱动电流脉冲波形,通过优化电流波形参数可以将泵浦波长利用率提高30%左右,得到更大的有效泵浦能量。
A new method of testing the thermal relaxation time of the semiconductor laser was used to measure the time-resolved spectra at different times in the pulse of the optical signal. The AIGaAs / GaAs semiconductor laser pump source of the TO-package and the cm-Bar array was tested to obtain the thermal relaxation time Respectively 66μs and 96μs. Under the current operating conditions of square wave drive current pulses, the semiconductor laser as the pump source of solid-state laser, if the thermal relaxation time is too long, the lasing wavelength within a single pulse deviates from the absorption band of the solid-state laser medium, Utilization and effective pump energy reduction. In order to overcome the deficiencies of the prior art, two new types of driving current pulse waveforms are proposed in this paper. By optimizing the current waveform parameters, the pump wavelength utilization rate can be increased by about 30% to obtain larger effective pumping energy.