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薄的应力补偿层AlGaN的引进对InGaN量子阱结构的发光二极管输出功率和内量子效率的影响被详细考察。由理论模拟结果得知,不管是在低温还是高温,合适的应力补偿层引进都能极大改善LED器件输出功率和内量子效率。应力补偿层AlGaN的加入导致器件漏电流的降低被认为是器件效能提高的主要原因。定量优化AlGaN应力补偿层的厚度和其中Al的含量在这里也被探讨研究。计算结果表明,当应力补偿型InGaN-AlGaN量子阱结构中Al-GaN厚度为1nm,Al含量为0.25时,能够获得最大的发光功效和内量子效率。
The effect of introducing a thin AlGaN layer on the output power and the internal quantum efficiency of the InGaN quantum well structure is examined in detail. The theoretical simulation results show that, at low temperature or high temperature, the introduction of a suitable stress compensation layer can greatly improve the LED device output power and internal quantum efficiency. The addition of AlGaN to the stress compensation layer leads to the decrease of leakage current of the device, which is considered as the main reason for the improvement of device performance. The quantitative optimization of AlGaN stress compensation layer thickness and the content of Al are also discussed here. The calculated results show that the maximum luminous efficiency and internal quantum efficiency can be obtained when the thickness of Al-GaN in the stress-compensated InGaN-AlGaN quantum well structure is 1 nm and the Al content is 0.25.