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依据离化杂质散射、声学声子散射和谷间散射的散射模型,在考虑电子谷间占有率的基础上,通过求解玻尔兹曼方程计算了不同锗组分下,不同杂质浓度时应变Si/(001)Si1-xGex的电子迁移率.结果表明:当锗组分达到0.2时,电子几乎全部占据Δ2能谷;低掺杂时,锗组分为0.4的应变Si电子迁移率与体硅相比增加约64%;对于张应变SiNMOS器件,从电子迁移率角度来考虑不适合做垂直沟道.选择相应的参数,该方法同样适用于应变Si其他晶面任意方向电子迁移率的计算,为应变Si器件、电路的设计提供了一定的设计依据.
Based on the scattering model of ionized impurity scattering, acoustical phonon scattering and intergranular scattering, based on the calculation of the Boltzmann equation, the strain Si / (001) Si1-xGex. The results show that when the germanium component reaches 0.2, almost all of the electrons occupy the Δ2 energy valley; at low doping, the strained Si electron mobility with a germanium component of 0.4 corresponds to the bulk silicon Compared with about 64% increase.For tensile strained SiNMOS device, it is not suitable for vertical channel from the viewpoint of electron mobility.With the corresponding parameters, this method is also suitable for the calculation of electron mobility in any direction of other strained Si, For the strain of Si devices, circuit design provides a certain design basis.