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单滑移铜晶体的循环应力-应变响应可以由形变过程中逐步形成特征性的位错组态:由基位错组成的驻留滑移带的楼梯结构(或位错墙结构)和基体的脉纹结构,以及位错在这二种组态中的运动来解释。实验表明,拉伸轴方向为[245]的铜晶体的循环应力——应变响应与文献中报导的[123]方向的单滑移晶体比较,具有较低的初始硬化速率,较高的驻留滑移带成核应力和饱和应力。 TEM观察揭示范性应变幅为3×10~(-3)下循环饱和的[245]晶体的位错结构与[123]晶体不同;驻留滑移带是由位错胞组成的,基体的位错脉纹则短而多叉。在(111)切面上,胞间的位向差使各位错晶胞显示出不同的衍
The cyclic stress-strain response of single-slip copper crystals can gradually form characteristic dislocations during the deformation process: the stairway structure (or dislocation wall structure) of the slip-slip zone consisting of base dislocations and the Vein structure, and dislocation in these two configurations to explain the movement. Experiments have shown that the cyclic stress-strain response of Cu crystals in the direction of the stretching axis [245] is lower than the single slip crystals reported in the literature [123], with a lower initial hardening rate and higher residence Slipband nucleation stress and saturation stress. The TEM observation reveals that the dislocation structure of [245] crystals with cyclic saturation under the range of 3 × 10 ~ (-3) is different from that of [123] crystals. The resident slip band is composed of dislocation cells, Dislocation pulse pattern is shorter and more fork. In the (111) section, the dislocation between the cells makes the dislocated cells show different derivatives