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真空共蒸发制备掺Zn(2%,4%(质量比))的SnS薄膜。研究热处理对Zn掺杂SnS薄膜的结构、表面形貌、化学组分及光学特性的影响。实验给出2%掺Zn薄膜经300℃,40 min热处理后,得到正交晶系的SnS多晶薄膜。掺Zn可一定程度抑制薄膜中S的损失,使薄膜体内Sn∶S元素化学计量得到改善,从未掺Zn的Sn∶S比为1.90∶1降到1.38∶1(2%)及1.36∶1(4%)。掺Zn后SnS薄膜的吸收边都发生红移,光吸收系数高达105cm-1。未掺Zn薄膜的直接光学带隙1.95 eV,掺Zn是1.375 eV(2%)和1.379 eV(4%)。Sn和S在薄膜中分别呈+2和-2价态,Zn以间隙和替位两种状态存在。
ZnS (2%, 4% (mass ratio)) SnS thin films were prepared by vacuum co-evaporation. The effects of heat treatment on the structure, surface morphology, chemical composition and optical properties of Zn-doped SnS films were investigated. Experimental results show that the 2% Zn-doped films are annealed at 300 ℃ for 40 min to obtain the orthorhombic SnS polycrystalline films. The addition of Zn could inhibit the loss of S in the film to a certain degree, and the Sn: S elemental stoichiometry in the film was improved from 1.90:1 to 1.38:1 (2%) and 1.36:1 (4%). SnS doped ZnS red shift occurs at the absorption edge, the optical absorption coefficient of up to 105cm-1. The direct optical band gap of undoped Zn films was 1.95 eV, and Zn doping was 1.375 eV (2%) and 1.379 eV (4%). Sn and S were present in the +2 and -2 valence states in the thin film, respectively, and Zn existed in both the interstitial and the alternate positions.