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以Ｇｅ为例，研究了双电子复合代替自电离与双电子俘获对离子布居的影响；通过解包括双激发态和自电离与双电子俘获过程的速率方程组，研究了类Ｆ离子与类Ｎｅ离子基态对１９．６ｎｍ与２３．６ｎｍ激光线上、下能级的布居贡献因子及类Ｎａ离子与类Ｎｅ离子的电离速率，并讨论了这两条激光线的反转与增益。
Taking Ge as an example, the effect of double-electron recombination instead of self-ionization and double-electron-trapping on ion population is studied. By solving the rate equations including the double-excited states and the self-ionization and double-electron trapping processes, The contributions of Ne ion ground states to the population of 19.6 nm and 23.6 nm laser lines and the ionization rates of Na ions and Ne ions are discussed. The inversion and gain of these two laser lines are also discussed.