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利用硼离子Ｂ＋注入方法来改善Ｓｉ３Ｎ４薄膜的力学性质，并就Ｂ＋注入对Ｓｉ３Ｎ４薄膜驻极体性质的影响进行了较为系统的研究．实验结果表明，Ｂ＋注入能够有效地降低薄膜的内应力，而对薄膜的驻极体性质有不利的影响；用化学表面修正能够在一定程度上提高材料的抗恶劣环境能力。
The mechanical properties of Si3N4 thin films were improved by boron ion implantation, and the influence of B + implantation on the electret properties of Si3N4 thin films was systematically studied. The experimental results show that the B + implantation can effectively reduce the internal stress of the film, but has an adverse effect on the electret properties of the film. Using the chemical surface modification can improve the anti-harshness of the material to a certain extent.