【摘 要】
：
ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition(MOCVD),and the temperature-dependent photoluminescence(PL)properties
【机 构】
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Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,C
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ZnTe films have been prepared on Si substrates by metal-organic chemical vapour deposition(MOCVD),and the temperature-dependent photoluminescence(PL)properties were investigated.The near-band-edge(NBE)emission of the ZnTe sample at 83K shows an asymmetry line shape,which can be decomposed into two Gaussian lines labelled by FE and BE.Temperature-dependent PL intensity of the NBE peak shows two variation regions,and an expression with two dissociation channels fits well to the experimental data.The results of thetemperature-dependent full width at half maximum(FWHM)and peak energy were well understood under the framework of the two-dissociation-channel model.That is,at low temperature,the emission from bound excitons goves the NBE peak,while above 157K,the free exciton emission becomes dominant gradually.A simple model with three energy levels was employed to describe the variation in emission intensity of BE and FE with temperature.
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