论文部分内容阅读
针对化学机械抛光工艺对碲镉汞材料所产生的亚表面损伤层进行了研究。利用椭圆偏振光谱方法对经过腐蚀剥层的碲镉汞材料表面进行了光学表征,认为化学机械抛光工艺造成的亚表面损伤层的深度大概为抛光工艺中所使用研磨颗粒直径的15~20倍。通过少子寿命表征和光导器件性能的对比测试,认为将该亚表面损伤层完全去除后,材料的少子寿命和器件的光电性能会得到明显的提高。
The surface damage layer produced by HgCdTe material was studied in chemical mechanical polishing. Ellipsometry was used to characterize the surface of HgCdTe-corroded samples. The depth of subsurface damage caused by the chemical mechanical polishing was about 15-20 times the diameter of the abrasive particles used in the polishing process. Through the comparative test of life characteristics of minority carriers and performance of photoconductive devices, it is considered that after the sub-surface damage layer is completely removed, the minority carrier lifetime and the photoelectric properties of the device can be obviously improved.