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扫描非线性介电显微镜(SNDM)利用非线性介电效应检测电容的变化情况,分辨率达到亚纳米量级,精度达到10-22F,主要应用于材料微区的电性能研究,目前以这项技术进行的研究主要集中在铁电材料和半导体材料方面,相关的报道也较少。本研究用扫描非线性介电显微镜对集成电路中具有n型与p型掺杂的60μm×60μm区域进行二维表征,得到定点非线性电容与电压的关系曲线,并由积分得到对应的电容电压特性曲线,认为界面陷阱的作用是金属-氧化物-半导体非线性电容-电压特性曲线突变的影响因素。
Scanning nonlinear dielectric microscope (SNDM) using non-linear dielectric effect detection of capacitance changes, the resolution of sub-nano-scale accuracy of 10-22F, mainly used in electrical properties of the material micro-area, the current to this The research on technology mainly focuses on ferroelectric materials and semiconductor materials, and the related reports are few. In the present study, a two-dimensional characterization of the 60μm × 60μm region with n-type and p-type doping in the integrated circuit was performed by scanning nonlinear dielectric microscope. The relationship between the fixed-point nonlinear capacitance and voltage was obtained and the corresponding capacitance voltage It is considered that the effect of interface traps is a factor of the sudden change of the nonlinear capacitance-voltage characteristic of metal-oxide semiconductor.