本文介绍一种新型的β—射线探测器的制造过程及其特性.采用背吸杂技术有效地降低了器件的反向漏电流并提高了成品率,提出并应用真空镀铜工艺制作P型碲化镉的低阻接触,取得了良好的效果,该探测器由一个PN结二极管构成.在20℃,2V的电压下其反向漏电流小于3.5X10~(-12)A/mm~2,在60℃,2V的电压下其反向漏电流小于3.5×10~(-11)A/mm~(2),因而探测器可在60℃下正常工作.在标准~(85)Krβ—射线源上获得了1.65×10~(-9)A的输出电流,其截止频率大于2300Hz This paper introduces the manufacturing process and characteristics of a new type of β-ray detector.Using back-absorption technology effectively reduces the reverse leakage current of the device and improves the yield, and proposes and applies the vacuum copper plating process to make P-type tellurium The detector has a PN junction diode and its reverse leakage current is less than 3.5X10 ~ (-12) A / mm ~ 2 under the voltage of 2V at 20 ℃. The reverse leakage current is less than 3.5 × 10 ~ (-11) A / mm ~ (2) at 60 ℃ under the voltage of 2V, so the detector can work normally at 60 ° C. In the standard ~ (85) Krβ- Source of 1.65 × 10 ~ (-9) A output current, the cut-off frequency is greater than 2300Hz