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用等离子体增强化学气相沉积(PECVD)方法制备氢化非晶硅(a-Si:H)薄膜,利用喇曼散射谱、椭偏透射谱和暗电导测试,通过改变辉光放电前SiH4气体温度,研究了气体温度对薄膜非晶网络结构和光电性能的影响.结果表明,随着辉光放电前SiH4气体温度从室温提高到433K,a-Si:H薄膜的短程有序和中程有序程度提高,折射率和吸收系数增强,同时,暗电导提高2个数量级.a-Si:H薄膜非晶网络结构的变化是其暗电导提高的主要原因.
Hydrogenated amorphous silicon (a-Si: H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD). Raman scattering spectra, ellipsometric transmission spectra and dark conductance measurements were used to measure the temperature of SiH4 gas before glow discharge. The effects of gas temperature on the structure and optical properties of amorphous films were investigated. The results show that the short-range order and mid-range order of the a-Si: H thin films are improved with increasing SiH4 gas temperature from room temperature to 433K before glow discharge Increase, refractive index and absorption coefficient increase, while the dark conductance increased by 2 orders of magnitude.A-Si: H thin film amorphous network structure is the main reason for the increase of dark conductance.